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| savantic semiconductor product specification silicon npn power transistors 2sc3528 description with to-3pfa package high collector current low saturation voltage applications for high voltatge ,high speed power switching applications pinning(see fig.2) pin description 1 base 2 collector 3 emitter absolute maximum ratings(t c =25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 20 a i cp collector current-peak 30 a i b base current 6 a t c =25 125 p c collector power dissipation t a =25 3 w t j junction temperature 150 t stg storage temperature -55~150 downloaded from: http:///
savantic semiconductor product specification 2 silicon npn power transistors 2sc3528 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.5a ;l=25mh 400 v v ce (sat) collector-emitter saturation voltage i c =10a; i b =2a 1.0 v v be (sat) base-emitter saturation voltage i c =10a; i b =2a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 0.1 ma i ebo emitter cut-off current v eb =7v; i c =0 0.1 ma h fe-1 dc current gain i c =2a ; v ce =5v 15 h fe-2 dc current gain i c =10a ; v ce =5v 10 f t transition frequency i c =1a ; v ce =10v;f=1.0mhz 15 mhz switching times t on turn-on time 1.0 s t s storage time 2.5 s t f fall time i c =10a; i b1 =-i b2 =2.0a v cc =125v 1.0 s downloaded from: http:/// savantic semiconductor product specification 3 silicon npn power transistors 2sc3528 package outline fig.2 outline dimensions (unindicated tolerance:0.3mm) downloaded from: http:/// |
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